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 MMVL2101T1
Preferred Device
Silicon Tuning Diode
These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid-state reliability in replacement of mechanical tuning methods.
Features
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* * * * *
High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance - 10% Complete Typical Design Curves Pb-Free Package is Available
30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE
1 CATHODE 2 ANODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 30 200 Unit Vdc mAdc 1
2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board, TA = 25C (Note 1) Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD 200 1.57 RqJA TJ, Tstg 635 150 mW mW/C C/W C Max Unit
PLASTIC SOD-323 CASE 477 STYLE 1
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-4 Minimum Pad
4G M G G
4G = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device MMVL2101T1 MMVL2101T1G Package Shipping
SOD-323 3000 / Tape & Reel SOD-323 3000 / Tape & Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2006
1
February, 2006 - Rev. 2
Publication Order Number: MMVL2101T1/D
MMVL2101T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMVL2101T1 Min 6.1 Nom 6.8 Max 7.5 Symbol V(BR)R IR TCC Min 30 - - Typ - - 280 Max - 0.1 - Unit Vdc mAdc ppm/C
Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5
TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT
(CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc.
3. Q, FIGURE OF MERIT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = -65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation, which defines TCC:
TCC + CT() 85C) - CT(-65C) 106 * 85 ) 65 CT(25C)
Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations:
Q + 2pfC G
Accuracy limited by measurement of CT to 0.1 pF.
(Boonton Electronics Model 33AS8 or equivalent). Use Lead Length [ 1/16".
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2
MMVL2101T1
TYPICAL DEVICE CHARACTERISTICS
1000 500 C T , DIODE CAPACITANCE (pF) 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 TA = 25C f = 1.0 MHz
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
1.040 NORMALIZED DIODE CAPACITANCE I R , REVERSE CURRENT (nA) 1.030 1.020 1.010 1.000 0.990 0.980 0.970 0.960 -75 -50 NORMALIZED TO CT at TA = 25C VR = (CURVE) -25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (C) +100 +125 VR = 4.0 Vdc VR = 30 Vdc VR = 2.0 Vdc 100 50 20 10 5.0 2.0 1.0 0.50 0.20 0.10 0.05 0.02 0.01 TA = 75C TA = 125C
TA = 25C
0
5.0
10 15 20 VR, REVERSE VOLTAGE (VOLTS)
25
30
Figure 2. Normalized Diode Capacitance versus Junction Temperature
5000 3000 2000 Q, FIGURE OF MERIT Q, FIGURE OF MERIT 1000 500 300 200 100 50 30 20 10 1.0 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) 5000 3000 2000 1000 500 300 200 100 50 30 20 30 10 10
Figure 3. Reverse Current versus Reverse Bias Voltage
TA = 25C f = 50 MHz 20
TA = 25C VR = 4.0 Vdc 20 30 50 70 100 f, FREQUENCY (MHz) 200 250
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
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MMVL2101T1
PACKAGE DIMENSIONS
SOD-323 CASE 477-02 ISSUE G
HE D
b
1
2
E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 STYLE 1: PIN 1. CATHODE 2. ANODE INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105
A3 A L
NOTE 5
MIN 0.031 0.000
C
NOTE 3
A1
SOLDERING FOOTPRINT*
0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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4
MMVL2101T1/D


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